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SEMD9
NPN/PNP Silicon Digital Transistor Array Preliminary data * Switching circuit, inverter, interface circuit, driver circuit * Two (galvanic) internal isolated NPN/PNP Transistors in one package * Built in bias resistor (R1=10k, R2 =47k) Tape loading orientation
Top View
321
4 5 3 6 1 2
Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side
C1 6
B2 5
E2 4
R2 R1 TR1 R2 1 2 B1 3 C2
EHA07176
TR2 R1
456
Direction of Unreeling
Type SEMD9
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 C Junction temperature Storage temperature
Thermal Resistance
Junction - soldering point 1)
1For calculation of R thJA please refer to Application Note Thermal Resistance
WR
E1
Marking WU
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 6 20 100 250 150 -65 ... 150
Unit V
mA mW C
RthJS
300
K/W
1
Feb-26-2004
SEMD9
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 2 fT 150 R1 R1/R2 7 0.19 10 0.21 13 0.24 Vi(on) 0.5 1.4 Vi(off) 0.5 1 VCEsat 0.3 hFE 70 IEBO 167 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ. max.
Unit
V
nA A V
k -
MHz pF
1) Pulse test: t < 300s; D < 2%
2
Feb-26-2004
SEMD9 NPN Type
DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.2
0.4
0.6
V
1
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10
-1
10 0 10
-2
10 -1 -1 10
10
0
10
1
V
10
2
10
-3
0
0.5
1
V
2
Vi(on)
Vi(off)
3
Feb-26-2004
SEMD9 PNP Type
DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.2
0.4
0.6
V
1
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10
-1
10 0 10
-2
10 -1 -1 10
10
0
10
1
V
10
2
10
-3
0
0.5
1
V
2
Vi(on)
Vi(off)
4
Feb-26-2004
SEMD9
Total power dissipation P tot = f (TS)
300
mW
Ptot
200
150
100
50
0 0
15
30
45
60
75
90 105 120 C
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
10 2
Ptotmax/ PtotDC
RthJS
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Feb-26-2004

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